Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...
Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ...
Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ...
Samsung K4A4G165WF-BCTD FBGA-96 DDR SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC ...
SDRAM Programmable IC Chip MT48LC32M16A2P-75 IT:C SDRAM Memory IC 512Mbit Parallel 133 MHz 5.4 Ns 54-TSOP II PRODUCT DESCRIPTION Part number MT48LC32M16A2P-75 IT:C is manufactured by Micron Technology Inc and distributed by Stjk. As one of the leading ...
LP2998QMRX/NOPB TI Professional Power Management PMIC DDR I & DDR II Termination Reg SOP-8 AEC-Q100 LP2998QMRE/NOPB LP2998QMR/NOPB Manufacturer: Texas Instruments Product Category: Professional ...
IS42S16400J-7TLI SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TSOP II Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 64Mb (4M x 16) Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5....
IS42S16400J-7TLI SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TSOP II Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 64Mb (4M x 16) Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5....
DDR VDDQ and Termination Voltage Regulator Features • Two linear regulators -Maximum 2A current from VDDQ -Source and sink up to 2A VTT current • 1.7V to 2.8V adjustable VDDQ output voltage • 500mV typical VDDQ dropout voltage at 2A • VTT tracking at 50% of VDDQ • Excellent load and line regulation, low noise • Fast transient response • Meet JEDEC DDR-I and DDR-II...
DDR VDDQ and Termination Voltage Regulator Features • Two linear regulators -Maximum 2A current from VDDQ -Source and sink up to 2A VTT current • 1.7V to 2.8V adjustable VDDQ output voltage • 500mV typical VDDQ dropout voltage at 2A • VTT tracking at 50% of VDDQ • Excellent load and line regulation, low noise • Fast transient response • Meet JEDEC DDR-I and DDR-II...
... specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-...
... device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF-Memory (DDR SDRAM)-Cell phone-Workstation, Server, Video Camera -Desktop PC, Note book PC
Integrated Circuit IC MT48LC16M16A2TG-75:D SDRAM Memory IC 256Mbit Parallel 133 MHz 5.4 Ns 54-TSOP II PRODUCT DESCRIPTION Part number MT48LC16M16A2TG-75:D is manufactured by TI Technologies and distributed by Stjk. As one of the leading distributors of ...
HY57V561620FTP-HI DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT . The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will take around 3-5 days...