transistor specification

PCBA components SMT surface mount technology soldering process circuit board design electronic components integrated circuits resistors capacitors inductors diodes transistors PCB manufacturing wave soldering reflow soldering BOM test points package types ...

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

SI4010-C2-GSR RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is ...

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ...

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A Current - ...

...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor specifications...

...TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications...

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Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ...

Original and new Transistor SOT-89 ZVN4525ZTA MOS tube Products Description: 1.This 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal ...

...Transistor Infrared Sensor Product Description of DeLaRue Glory NMD NMD100 NS200 Photo Transistor Infrared Sensor The DeLaRue Glory NMD NMD100 NS200 is a model or series of banknote dispensers manufactured by DeLaRue Glory. The NS200 Photo Transistor Infrared Sensor is a specific component used within this equipment. The NS200 Photo Transistor...

...transistors) Specifications: Datasheets EMD3, UMD3N, IMD3A Product Photos EMT6_EMT6 PKg Catalog Drawings EMT-6 Package Top Standard Package 8,000 Category Discrete Semiconductor Products Family Transistors (BJT) - Arrays, Pre-Biased Series - Packaging Tape & Reel (TR) Transistor...

AP10H06S N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different ...

... MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes ...

NPT2010 Specifications Part Status Active Transistor Type HEMT Frequency 0Hz ~ 2.2GHz Gain 15dB Voltage - Test 48V Current Rating - Noise Figure - Current - ...

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... Glory. The NS200 Photo Transistor Infrared Sensor is a specific component used within this equipment. The NS200 Photo Transistor Infrared Sensor is an optical sensing device that utilizes infrared (IR) light to detect the presence or absence of objects,

...Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications...

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...